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| CHA2290 RoHS COMPLIANT 10-18GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2290 is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. V5 VD1 VD234 VG1 VG2 VG34 VC Typical on wafer measurements : Gain & NF 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10 1 2 Main Features * * * * * * Frequency range : 10 -18GHz 2.2dB Noise Figure. 25dB gain Gain control range: 25dB DC power consumption: 180mA @ 5V Chip size : 2.49 X 1.23 X 0.10 mm Gain (dB) NF (dB) 1 4 1 6 1 8 20 Frequency (GHz) Main Characteristics Tamb. = 25C Parameter Fop G NF Gctrl Id Operating frequency range Small signal gain Noise figure Gain control range with Vc variation Bias current Min 10 Typ Max 18 Unit GHz dB dB dB mA 25 2.2 20 180 ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA22906193 - 11 jul 06 1/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10-18GHz LNA VGA Electrical Characteristics for Broadband Operation Tamb = +25C, V5=VD234= 5V Symbol Fop G G Is NF CHA2290 Parameter Operating frequency range Small signal gain (1) Small signal gain flatness (1) Reverse isolation (1) Noise figure with VC = 1.2V 10 - 16 GHz (1) 17 - 18 GHz Min 10 Typ Max 18 Unit GHz dB dB dB dB 25 1 60 2.2 2.5 25 11 3.0:1 2.5:1 V5 = VD234 -1.5 5 [-0.9, +1.2] 25 180 +1.3 Gctrl P1dB VSWRin VSWRout Vd VC Id1 Id Gain control range versus VC Output power at 1dB compression with VC =1.2V Input VSWR (1) Output VSWR (1) Drain bias voltage Control bias voltage First stage Bias current (2) with VC=1.2V Bias current total (3) with VC=1.2V dB dBm V V mA mA (1)These values are representative of on-wafer measurements that are made without bonding wires at RF ports. (2) For optimum noise figure, the bias current Id1 should be adjusted to 25mA with VG1 voltage. (3) With Id1=25mA, adjust VG234 voltage for a total drain current around 180mA. Absolute Maximum Ratings Tamb. = 25C (1) Symbol Vd Id Vg Vc Vdg Pin Tch Ta Tstg Parameter Maximum Drain bias voltage Maximum drain bias current Gate bias voltage Maximum Control bias voltage Maximum drain to gate voltage (Vd - Vg) Maximum input power overdrive (2) Maximum channel temperature Operating temperature range Storage temperature range Values +5.25 250 -2.5 to +0.4 +1.5 +5.0 -10 +175 -40 to +85 -55 to +125 Unit V mA V V V dBm C C C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA22906193 - 11 jul 06 2/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10-18GHz LNA VGA Typical on wafer Measurements Gain & Noise Figure versus frequency 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10 12 CHA2290 Gain (dB) NF (dB) 14 16 18 20 Frequency (GHz) Bias Conditions : V5=VD234= 5V, VG1 for Id1= 25mA, VG2=VG34= -0.5V, VC= 1.2V Gain versus frequency and biaising conditions 28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 6 8 10 V5 = VD1 = VD234 = 5V VC = 1,2V (dB) V5 = VD1 = VD234 = 5V VC = -0,9V 12 14 16 18 20 22 24 26 28 Frequency (GHz) Common bias Conditions : VG1 = VG2 = VG34 = -0.3V. Ref. : DSCHA22906193 - 11 jul 06 3/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10-18GHz LNA VGA S11 versus frequency and biaising conditions CHA2290 0 -4 -8 (dB) V5 = VD1 = VD234 = 5V VC = -0,9V -12 -16 V5 = VD1 = VD234 = 5V VC = 1,2V -20 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 Frequency (GHz) Common bias Conditions : VG1 = VG2 = VG34 = -0.3V. S22 versus frequency and biaising conditions 0 -4 -8 (dB) V5 = VD1 = VD234 = 5V VC = 1,2V -12 -16 V5 = VD1 = VD234 = 5V VC = -0,9V -20 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 Frequency (GHz) Common bias Conditions : VG1 = VG2 = VG34 = -0.3V. Ref. : DSCHA22906193 - 11 jul 06 4/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10-18GHz LNA VGA CHA2290 Gain versus Output power 28 27 26 25 12GHz 14GHz 16GHz Gain (dB) 24 23 22 21 20 19 18 0 2 4 6 8 10 12 14 16 Output power (dBm) Bias Conditions : V5 = VD234 = 5V, VG1 for Id1 = 25mA, VG2 = VG34 = -0.5V, VC = 1.2V Ref. : DSCHA22906193 - 11 jul 06 5/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10-18GHz LNA VGA Chip Assembly CHA2290 To V5 DC drain supply feed 120pF To VD234 DC drain supply feed 120pF RF IN RF OUT 120pF 120pF 120pF To VG1 DC gate supply feed To VC DC supply feed To VG2, VG34 DC gate supply Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is recommended Bond Pad: 100 x 100 m Ref. : DSCHA22906193 - 11 jul 06 6/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 10-18GHz LNA VGA Mechanical Data CHA2290 Bonding pad positions ( Chip thickness : 100m. All dimensions are in micrometers ) Ref. : DSCHA22906193 - 11 jul 06 7/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2290 Ordering Information Chip form : CHA2290-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA22906193 - 11 jul 06 8/8 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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